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About this Engineering article
Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET by Poggi, Antonella; Moscatelli, Francesco; Solmi, Sandro; Nipoti, Roberta; Tamarri, Fabrizio; Pizzochero, G. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Poggi, Antonella; Moscatelli, Francesco; Solmi, Sandro; Nipoti, Roberta; Tamarri, Fabrizio; Pizzochero, G.
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 2009
- Field
- Engineering (Physical Sciences)