About this Engineering article
Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2014
- Language
- EN
- Field
- Engineering (Physical Sciences)