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Application of High Magnetic Fields in Semiconductor Physics: Proceedings of the International Conference Held in Grenoble, France, September 13–17, 1982 (Lecture Notes in Physics, 177) by K. v. Klitzing, B. Tausendfreund, H. Obloh (auth.), G. Landwehr (eds.) is a nonfiction available to read on EtoBox.
What is Application of High Magnetic Fields in Semiconductor Physics: Proceedings of the International Conference Held in Grenoble, France, September 13–17, 1982 (Lecture Notes in Physics, 177) about?
Hall and transverse resistivity measurements for Si-nMOS (i00) inversion layers have been made at temperatures between 4.2 K and 12 mK and a magnetic field of 120 kOe. The result indicates that the effect of short range scatterers is still dominant at the lowest temperatures. It has been found from a detailed study of transverse resistivity around the mobility gap region that five quantized Hall resistivity plateaus, corresponding to h/ie 2 for i = 4, 6, 8, 12 and 16, are potentially available for the quantum standard resistor under the magnetic field of 120 kOe at 3He -4He temperatures.
Who reads Application of High Magnetic Fields in Semiconductor Physics: Proceedings of the International Conference Held in Grenoble, France, September 13–17, 1982 (Lecture Notes in Physics, 177)?
It is typically read by self-directed learners exploring a subject in depth.
Common subject areas: history, science, philosophy, social sciences.
- Author
- K. v. Klitzing, B. Tausendfreund, H. Obloh (auth.), G. Landwehr (eds.)
- Publisher
- Springer-Verlag Berlin Heidelberg
- Published
- 1983
- Language
- EN
- ISBN
- 9783540394723
- Category
- nonfiction
- Subjects
- Science, Engineering, Physics
Other editions & translations
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