Opening book details…
About this Physics and Astronomy article
Enhancement of growth rate due to tin doping in GaAs epilayer grown by low pressure metal-organic chemical vapor deposition by Chang, C. Y.; Lee, M. K.; Su, Y. K.; Hsu, W. C. is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Chang, C. Y.; Lee, M. K.; Su, Y. K.; Hsu, W. C.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 1983
- Field
- Physics and Astronomy (Physical Sciences)