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Ferromagnetic semiconductor Ge1−x−ySnxMnyTe with phase transformation of ferroelectric type by G.V. Lashkarev; V.I. Sichkovskyi; M.V. Radchenko; V.E. Slynko; E.I. Slynko; T. Story; W. Dobrowolski; W. Knoff; T.Sh. Osmanov is a Materials Science article available to read on EtoBox.

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It is expected that joint existence of ferromagnetic properties and ferroelectric structural phase transition in diluted magnetic semiconductors IV-VI leads to new possibilities of these materials. Temperature of ferroelectric transition for such crystals can be tuned by the change of Sn/Ge ratio. Magnetic susceptibility, Hall effect, resistivity and thermoelectric power of Ge 1ÀxÀy Sn x Mn y Te single crystals grown by Bridgeman method (x 1⁄4 0.083-0.115; y 1⁄4 0.025-0.124) were investigated within 4.2-300 K. An existence of FM ordering at T C $50 K probably due to indirect exchange interaction between Mn ions via degenerated hole gas was revealed. A divergence of magnetic moment temperature dependences at TpT C in field-cooled and zero-field-cooled regimes is obliged to magnetic clusters which are responsible for superparamagnetism at T4T C ET f (freezing temperature) and become ferromagnetic at T C arranging spin glass state at ToT f ET C . Phase transition of ferroelectric type at TE46 K was revealed. Anomalous Hall effect which allows to determine magnetic moment was observed.

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Author

G.V. Lashkarev; V.I. Sichkovskyi; M.V. Radchenko; V.E. Slynko; E.I. Slynko; T. Story; W. Dobrowolski; W. Knoff; T.Sh. Osmanov

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0304-8853)

Published

2009

Language

EN

Field

Materials Science (Physical Sciences)