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The dissertation focuses on the analytic modeling of hexagonal boron nitride (hBN) based field effect transistors (FETs) for potential applications in gas sensing. It explores the unique properties of 2D hBN, including its electrical, mechanical, and thermal characteristics, which make it suitable for gas sensing, particularly for detecting NOx gases. The study aims to design an hBN-based FET and investigate its I-V characteristics and gas sensing capabilities.

Author

chitu

Language

EN