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About this Engineering article
200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates by Nakazawa, Satoshi; Tsurumi, Naohiro; Nishijima, Masaaki; Anda, Yoshiharu; Ishida, Masahiro; Ueda, Tetsuzo; Tanaka, Tsuyoshi is a Engineering article available to read on EtoBox.
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- Author
- Nakazawa, Satoshi; Tsurumi, Naohiro; Nishijima, Masaaki; Anda, Yoshiharu; Ishida, Masahiro; Ueda, Tetsuzo; Tanaka, Tsuyoshi
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2012
- Field
- Engineering (Physical Sciences)