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About this Engineering article

The Formation of Highly Conductive Shallow Junction Layers in (100) Siliconl By Gallium Ion Implantation by Harrison, H.B.; Li, Y.H.; Sai-Halasz, G.A.; Iyer, S. is a Engineering article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Engineering.

Author
Harrison, H.B.; Li, Y.H.; Sai-Halasz, G.A.; Iyer, S.
Publisher
Cambridge University Press; Cambridge University Press (Materials Research Society); Cambridge University Press (CUP) (ISSN 0272-9172)
Published
1986
Field
Engineering (Physical Sciences)

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