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2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC) - Investigation of single-event-transient effect in floating-gate junctionless double-gate field-effect-transistor by Dubey, Avashesh; Gupta, Mridula; Narang, Rakhi; Saxena, Manoj is a scholarly article available to read on EtoBox.

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In this paper, effects of single event transient on Floating gate junction-less double gate field effect transistor (FG JL DG FET) have been studied using TCAD simulation. The result shows that the drain current peak obtained after heavy ion strike is 2.69x10 -4 A at LET value of 11 MeV . cm 2 /mg which is high as compared to the on-state current i.e. 1.06x10 -4 A at (Vds=0.5V and Vgs=1.0V). Collected charge with various LET has also been investigated. Moreover, the effect of heavy ion on the different part of the device has been simulated in order to obtain the sensitive region of the device. It is found that the drain to channel junction of FG JL DG FET is most sensitive part of the device. The findings are compared with floating gate double gate field effect transistor (FG DG FET) in order to compare the SET performance of the FG JL DG FET.

Author

Dubey, Avashesh; Gupta, Mridula; Narang, Rakhi; Saxena, Manoj

Publisher

IEEE

Published

2019

Language

EN