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This paper presents the PSP model, an advanced surface-potential-based MOSFET model developed for circuit simulation, which incorporates recent advancements in MOS device physics and modeling. It addresses the challenges of accurately reproducing device characteristics while maintaining computational efficiency and generality, particularly for sub-100-nm MOSFETs. The model includes features such as gate tunneling current, noise sources, and quantum-mechanical effects, making it suitable for modern RF CMOS a

Author

Baishali Gautam

Language

EN