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About this Engineering article
RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate by Lecourt, F.; Ketteniss, N.; Behmenburg, H.; Defrance, N.; Hoel, V.; Eickelkamp, M.; Vescan, A.; Giesen, C.; Heuken, M.; De Jaeger, J.C. is a Engineering article available to read on EtoBox.
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- Author
- Lecourt, F.; Ketteniss, N.; Behmenburg, H.; Defrance, N.; Hoel, V.; Eickelkamp, M.; Vescan, A.; Giesen, C.; Heuken, M.; De Jaeger, J.C.
- Publisher
- The Institution of Electrical Engineers; Institution of Electrical Engineers; Institute of Electrical Engineers; Institution of Engineering and Technology (IET) (ISSN 0013-5194)
- Published
- 2011
- Language
- EN
- Field
- Engineering (Physical Sciences)