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What is Carrier-Induced Band Gap Changes in InP about?

This paper theoretically estimates the change in refractive index due to free carrier injection in InP, GaAs, and InGaAsP, considering effects like bandfilling, band-gap shrinkage, and free-carrier absorption. The results indicate significant refractive index changes, potentially enabling low-loss optical phase modulators and switches. The findings align well with existing experimental data, suggesting practical applications in integrated optics.

Author

ahmed.rafeek19971

Language

EN