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1N5822 Schottky Diode Specifications by carlos is a document available to read on EtoBox.

What is 1N5822 Schottky Diode Specifications about?

The document provides a product overview and description of the 1N5822 40 V, 3.0 A Schottky Rectifier. Key features include extremely low forward voltage drop, low power loss and high efficiency, and low stored charge for majority carrier conduction. Specifications include a maximum forward voltage of 0.525 V, reverse leakage current of 2000 uA, and continuous forward current of 3.0 A. The rectifier employs a Schottky barrier principle in a large area metal-to-silicon power diode construction.

Author
carlos
Language
EN

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