About this Engineering article
Simulating single-event burnout of n-channel power MOSFET's by Johnson, G.H.; Hohl, J.H.; Schrimpf, R.D.; Galloway, K.F. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Johnson, G.H.; Hohl, J.H.; Schrimpf, R.D.; Galloway, K.F.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 1993
- Language
- EN
- Field
- Engineering (Physical Sciences)