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Reduction of surface recombination in n-type HgZnTe (x=0.16) crystal by K.H Kim; K.N Oh; S.M An; D.Y Shin; J.K Hong; Y.H Kim; S.U Kim; M.J Park is a Engineering article available to read on EtoBox.

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A model of surface recombination velocity for n-type Hg \V Zn V Te is presented. It has been shown that, both experimentally and theoretically, the surface recombination velocity is dominated by Shockley}Read recombination mechanism at higher temperature and dominated by Auger process at low temperature. We have further developed a surface recombination theory for the narrow-gap semiconductor. It is concluded that the optimum conditions to reduce recombination velocity is about 2;10 cm\ in the "xed charge density and the Cd Zn Te passivation layer thickness is between 140 and 160 nm.

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Author

K.H Kim; K.N Oh; S.M An; D.Y Shin; J.K Hong; Y.H Kim; S.U Kim; M.J Park

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2000

Language

EN

Field

Engineering (Physical Sciences)