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Second Harmonic Generation in Germanium Quantum Wells for Nonlinear Silicon Photonics by Frigerio, Jacopo; Ciano, Chiara; Kuttruff, Joel; Mancini, Andrea; Ballabio, Andrea; Chrastina, Daniel; Falcone, Virginia; De Seta, Monica; Baldassarre, Leonetta; Allerbeck, Jonas; Brida, Daniele; Zeng, Lunjie; Olsson, Eva; Virgilio, Michele; Ortolani, Michele is a scholarly article available to read on EtoBox.

What is Second Harmonic Generation in Germanium Quantum Wells for Nonlinear Silicon Photonics about?

Second-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Natural and artificial materials with broken center-of-inversion symmetry in their unit cell display high SHG efficiency, however the silicon-foundry compatible group-IV semiconductors (Si, Ge) are centrosymmetric, thereby preventing full integration of second-order nonlinearity in silicon photonics platforms. Here we demonstrate strong SHG in Ge-rich quantum wells grown on Si wafers. The symmetry breaking is artificially realized with a pair of asymmetric coupled quantum wells (ACQW), in which three of the quantum-confined states are equidistant in energy, resulting in a double resonance for SHG. Laser spectroscopy experiments demonstrate a giant second-order nonlinearity at mid-infrared pump wavelengths between 9 and 12 microns. Leveraging on the strong intersubband dipoles, the nonlinear susceptibility almost reaches 10^5 pm/V

Author

Frigerio, Jacopo; Ciano, Chiara; Kuttruff, Joel; Mancini, Andrea; Ballabio, Andrea; Chrastina, Daniel; Falcone, Virginia; De Seta, Monica; Baldassarre, Leonetta; Allerbeck, Jonas; Brida, Daniele; Zeng, Lunjie; Olsson, Eva; Virgilio, Michele; Ortolani, Michele

Published

2021

Language

EN