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About this Engineering article
Evaluation of depth profile of defects in ultrathin Si film on buried SiO2 formed by implanted oxygen by Ogura, Atsushi; Tatsumi, Toru; Hamajima, Tomohiro; Kikuchi, Hiroaki is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ogura, Atsushi; Tatsumi, Toru; Hamajima, Tomohiro; Kikuchi, Hiroaki
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1996
- Field
- Engineering (Physical Sciences)
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