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Neutron Radiation induced Effects in 4H-SiC PiN Diodes by Gsponer, Andreas; Gaggl, Philipp; Maier, Jürgen; Thalmeier, Richard; Waid, Simon Emanuel; Bergauer, Thomas is a scholarly article available to read on EtoBox.

What is Neutron Radiation induced Effects in 4H-SiC PiN Diodes about?

Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC devices are extremely small, even after irradiation to very high fluences, enabling operation without cooling and at high temperatures. This study investigates the effect of neutron irradiation on 50$\mu$m p-n 4H-SiC diodes using current-voltage, capacitance-voltage, and charge collection efficiency (CCE) measurements up to neutron fluences of $1\times 10^{16}$ n$_{\text{eq}}$/cm$^2$. The leakage currents of the investigated devices remained extremely small, below 10 pA at 1.1 kV reverse bias. In the forward bias, a remarkable drop of the current was observed, which was attributed to an increased epi resistivity due to compensation of the epi layer doping by deep-level defects. The CCE was evaluated for alpha particles from a radioactive source, a 62.4 MeV proton beam at the MedAustron ion therapy center and using UV-TCT. The charge collection efficiency in reverse bias was shown to scale directly with the 1 MeV equivalent fluence $\Phi_{\text{eq}}$

Author

Gsponer, Andreas; Gaggl, Philipp; Maier, Jürgen; Thalmeier, Richard; Waid, Simon Emanuel; Bergauer, Thomas

Published

2023

Language

EN