Opening book details…
About this Engineering article
4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer by Wu, J.; Fursin, Leonid; Li, Yu Zhu; Alexandrov, Petre; Zhao, Jian H. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Wu, J.; Fursin, Leonid; Li, Yu Zhu; Alexandrov, Petre; Zhao, Jian H.
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 2004
- Field
- Engineering (Physical Sciences)
More by Wu, J.; Fursin, Leonid; Li, Yu Zhu; Alexandrov, Petre; Zhao, Jian H.
Browse all works by Wu, J.; Fursin, Leonid; Li, Yu Zhu; Alexandrov, Petre; Zhao, Jian H.