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About this Engineering article
Heavily phosphorus-doped epitaxial Si deposited by low-temperature plasma-enhanced chemical vapor deposition by Baert, K.; Vanhellemont, J.; Vandervorst, W.; Nijs, J.; Konagai, M. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Baert, K.; Vanhellemont, J.; Vandervorst, W.; Nijs, J.; Konagai, M.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1991
- Language
- EN
- Field
- Engineering (Physical Sciences)
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