Opening book details…
About this Engineering article
Breakdown characteristics of nFETs in inversion with metal/HfO2 gate stacks by N.A. Chowdhury; G. Bersuker; C. Young; R. Choi; S. Krishnan; D. Misra is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- N.A. Chowdhury; G. Bersuker; C. Young; R. Choi; S. Krishnan; D. Misra
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0167-9317)
- Published
- 2008
- Language
- EN
- Field
- Engineering (Physical Sciences)
More by N.A. Chowdhury; G. Bersuker; C. Young; R. Choi; S. Krishnan; D. Misra
Browse all works by N.A. Chowdhury; G. Bersuker; C. Young; R. Choi; S. Krishnan; D. Misra