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About this Materials Science article
High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment by Liu, Zirui; Wang, Jianfeng; Gu, Hong; Zhang, Yumin; Wang, Weifan; Xiong, Rui; Xu, Ke is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Liu, Zirui; Wang, Jianfeng; Gu, Hong; Zhang, Yumin; Wang, Weifan; Xiong, Rui; Xu, Ke
- Publisher
- American Institute of Physics; American Institute of Physics Inc.; Melville NY: American Institute of Physics; AIP Publishing (ISSN 2158-3226)
- Published
- 2019
- Field
- Materials Science (Physical Sciences)