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Optical, Electrical and Structural Properties of Indium-doped Cadmium Oxide Films Obtained by the Sol–gel Technique by M.A. Flores; R. Castanedo; G. Torres; O. Zelaya is a Engineering article available to read on EtoBox.

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Indium-doped cadmium oxide films were obtained by mixing cadmium oxide and indium oxide precursor solutions by the sol-gel technique. The indium atomic concentrations in solution (x) studied were 0, 2, 5 and 10 at%. The films were sintered at two different sintering temperatures (T s ) 350 and 450 1C, and after that annealed in a 96:4 N 2 /H 2 gas mixture atmosphere at 350 1C. X-ray diffraction patterns showed that all films sintered at T s 1⁄4 350 1C only consisted of cadmium oxide crystals. The films sintered at T s 1⁄4 450 1C consisted of cadmium oxide crystals also; however, for the highest indium atomic concentration (10 at%) the formation of cadmium indate oxide crystals was evident. All films show high optical transmission (485%) and an increase of the direct band gap value from 2.4 to 3.1 eV, as the indium atomic concentration in solution increases. The minimum resistivity value obtained was 6.3 Â 10 À4 O cm for the films with x 1⁄4 5 at%, T s 1⁄4 450 1C and annealed at 350 1C.

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Author

M.A. Flores; R. Castanedo; G. Torres; O. Zelaya

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0927-0248)

Published

2009

Language

EN

Field

Engineering (Physical Sciences)