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Facts and artefacts in the characterization of Si/SiGe multiayers with SIMS by P. C. Zalm; C. J. Vriezema; D. J. Gravesteijn; G. F. A. van de Walle; W. B. de Boer is a Engineering article available to read on EtoBox.

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## Abstract A number of Si/Si~1−__x__~ Ge~__x__~ heterostructures, grown by molecular beam epitaxy (MBE) and vapour phase epitaxy (VPE), were examined with secondary ion mass spectrometry (SIMS). A variety of experimental conditions was employed, limited to positive secondary ions and moderate to excellent depth resolution. The most elaborate results were obtained for O~2~ ^+^ primary ion bombardment at energies of 2–8 keV. These demonstrate (for __x__ < 0.4): (1) a minimal erosion rate variation with germanium content __x__; (2) the near‐absence of matrix effects, i.e. __x__ dependence, of the secondary ion yields for impurities like B, Ga, Sn, Sb and others; (3) an approximately concentration‐independent sensitivity for germanium. Furthermore, a surface‐energy‐difference‐driven, Ge‐segregation mechanism operative during MBE growth is discussed. This phenomenon is just one manifestation of the fundamentally different processes during MBE and VPE. Such processes may be responsible for the fact that interfaces in MBE samples, as obtained with SIMS, are loss abrupt than for VPE material. A simple explanation in terms of an inferior substrate‐cleaning procedure cannot be ruled out, ho

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Author

P. C. Zalm; C. J. Vriezema; D. J. Gravesteijn; G. F. A. van de Walle; W. B. de Boer

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Inc.; Wiley; Research Square (ISSN 0142-2421)

Published

1991

Language

EN

Field

Engineering (Physical Sciences)