About this scholarly article

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - CVD SiGe(C) epitaxial growth and its application to MOS devices by Murota, J.; Sakuraba, M.; Matsuura, T. is a scholarly article available to read on EtoBox.

Author

Murota, J.; Sakuraba, M.; Matsuura, T.

Publisher

IEEE

Published

2001

Language

EN