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Efficient PE-ALD for TiO2 Thin Films by rodger.wong is a document available to read on EtoBox.
What is Efficient PE-ALD for TiO2 Thin Films about?
The article presents a new plasma-enhanced atomic layer deposition (PE-ALD) process for high-quality TiO2 thin films using a novel titanium precursor, TDMADT. This process allows for the deposition of stoichiometric titanium dioxide at low temperatures (as low as 60°C) with minimal roughness and promising barrier performance. The study includes process optimization and in situ monitoring of film growth characteristics, demonstrating the efficiency of the new precursor in thin film applications.
- Author
- rodger.wong
- Language
- EN