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Imaging Defects and Dopants by H.Philipp Ebert is a Engineering article available to read on EtoBox.

What is Imaging Defects and Dopants about?

With the invention of the transistor, a revolution in the development of semiconductor-based electronic devices began. However, even in the very early stages, the importance of defects and dopant atoms became obvious. In fact, if one incorporates the right defects and dopant atoms into semiconductor materials, one can tune their electrical properties such that optimal device characteristics are achieved. Unfortunately, counteractive defects are often also formed unintentionally during semiconductor processing, leading to unfavorable electronic properties. Considerable research efforts have, therefore, focused on understanding the nanoscale physics that governs the formation of point defects, the incorporation behavior of impurities, and their respective electronic properties. Despite the long recognized importance of defects and dopant atoms, most conventional experimental techniques have relied on the interpretation of macroscopic data from differently processed crystals or on signals integrated over a large set of usually unknown defects. Conclusions about defects on the atomic level have been, therefore, necessarily limited. In view of this situation, the possibility of directly

Who reads Imaging Defects and Dopants?

Author

H.Philipp Ebert

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 1369-7021)

Published

2003

Language

EN

Field

Engineering (Physical Sciences)