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About this Physics and Astronomy article
Characterization of insulated gate Ga0.47In0.53As/Al0.48In0.52As heterojunction field-effect transistors by T. P. Leonard; J. Bregman; M. Pepper; G. J. Davies; E. G. Scott is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- T. P. Leonard; J. Bregman; M. Pepper; G. J. Davies; E. G. Scott
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 1991
- Field
- Physics and Astronomy (Physical Sciences)