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Laser-assisted Plasma-enhanced Chemical Vapor Deposition of Silicon Nitride Thin Film by Hung-Sheng Tsai; Gwo-Juinn Jaw; Sheng-Hsiung Chang; Chao-Chia Cheng; Ching-Ting Lee; Hai-Pei Liu is a Engineering article available to read on EtoBox.
What is Laser-assisted Plasma-enhanced Chemical Vapor Deposition of Silicon Nitride Thin Film about?
## Ž . Hydrogenated amorphous silicon᎐nitride a-Si᎐N :H films with low hydrogen content were deposited using a CO laser- Ž . assisted PECVD, or LAPECVD system. This system was based upon a conventional capacitive RF 13.56 MHz discharge to dissociate both ammonia and silane, but the substrate could be irradiated by a CO laser beam as well. Whether the substrates 2 were heated or not, irradiation with a CO laser beam without wavelength selection effectively reduced the amount of hydrogen 2 bonds in the films. These films were proved to have a larger index of refraction and better surface flatness. Besides, their resistance to corrosion was considerably improved as compared to films grown under a conventional PECVD process. While the resistive heating was replaced by appropriate CO laser irradiation, the absorption of laser beam raised the substrate-thin film 2 temperature up to 50᎐60ЊC only. This non-thermal process represented another advantage of our LAPECVD method.
Who reads Laser-assisted Plasma-enhanced Chemical Vapor Deposition of Silicon Nitride Thin Film?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Hung-Sheng Tsai; Gwo-Juinn Jaw; Sheng-Hsiung Chang; Chao-Chia Cheng; Ching-Ting Lee; Hai-Pei Liu
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0257-8972)
- Published
- 2000
- Language
- EN
- Field
- Engineering (Physical Sciences)