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About this Engineering article
Schottky Barrier Height of Al/n-In0.53Ga0.47As and Nb/n-In0.53Ga0.47As Diodes by H. Tamura; A. Yoshida; S. Muto; S. Hasuo is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- H. Tamura; A. Yoshida; S. Muto; S. Hasuo
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 1987
- Field
- Engineering (Physical Sciences)
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