Opening book details…
Can I read Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy on EtoBox?
Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy by Shuwei Li; Kazuto Koike is a Engineering article available to read on EtoBox.
What is Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy about?
Photoluminescence (PL) of quantum dots embedded in high potential barriers is studied as functions of barrier thickness and temperature. With the increase of barrier thickness, both the strengthened two-dimensional electron gas (2DEG) structure and strongly localized electron wave functions can increase the carrier recombination. The optical properties of two different-barrier-thickness samples exhibit different characteristics with the decreased measurement temperatures. The PL recombination characteristic of the samples with the barriers adjacent to a Si-doping GaAs layer is different from that of samples with the barrier adjacent to an i-GaAs layer.
Who reads Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Shuwei Li; Kazuto Koike
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2004
- Language
- EN
- Field
- Engineering (Physical Sciences)