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NTE2666 & NTE2667 High-Frequency Transistors by Leosonido Reyes is a document available to read on EtoBox.
This document provides specifications for the NTE2666 and NTE2667 silicon complementary transistors. These transistors are suitable for high frequency applications with features including a DC current gain specified up to 5 amps and a high current gain-bandwidth product. Absolute maximum ratings and electrical characteristics are provided, noting operating voltage and current limits as well as parameters like saturation voltage, gain, and frequency response.
- Author
- Leosonido Reyes
- Language
- EN