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About this Engineering article
Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiC by Hürner, Andreas; Bonse, C.; Clemmer, G.; Kallinger, B.; Heckel, T.; Erlbacher, T.; Mitlehner, H.; Häublein, V.; Bauer, A.J.; Frey, L. is a Engineering article available to read on EtoBox.
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- Author
- Hürner, Andreas; Bonse, C.; Clemmer, G.; Kallinger, B.; Heckel, T.; Erlbacher, T.; Mitlehner, H.; Häublein, V.; Bauer, A.J.; Frey, L.
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 2014
- Language
- EN
- Field
- Engineering (Physical Sciences)