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Effect of d.c. bias on the deposition rate using r.f.–d.c. coupled magnetron sputtering for SnNx thin films by R Kamei; T Migita; T Tanaka; K Kawabata is a Engineering article available to read on EtoBox.

What is Effect of d.c. bias on the deposition rate using r.f.–d.c. coupled magnetron sputtering for SnNx thin films about?

In an r.f.}d.c. coupled magnetron sputtering system, the magnetron discharge was generated by a 13.56 MHz r.f. source, and a d.c. power was simultaneously applied to a tin target through a low-pass "lter in order to control the incident ion energy on the target. When an extremely low r.f. power 5 W and d.c. power sources were applied simultaneously to the target, the glow discharge took place at a low d.c. bias of !30 V whose value was about one-seventh of that in the case of the d.c. magnetron discharge. SnN V "lms have been prepared at the r.f. power value of 5 W and the d.c. bias voltage values of !50 V to !350 V. The obtained values of the deposition rate varied from 1}40 nm/min. It was shown that the deposition rate of SnN V "lms is signi"cantly in#uenced by the target d.c. bias. The compositional ratio (N/Sn) of sputtered "lms was increased with the decrease of the target d.c. bias. The SnN V "lm could be prepared at the target d.c. voltage lower than the discharge voltage in the d.c. magnetron sputtering, with the result that the formation of SnN V "lms became possible at low ion energies. The resistivity of the SnN V "lm prepared at the d.c. bias voltage value of !100 V was

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Author

R Kamei; T Migita; T Tanaka; K Kawabata

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0042-207X)

Published

2000

Language

EN

Field

Engineering (Physical Sciences)