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About this Engineering article
A Novel Simulation Algorithm for Si Valence Hole Quantization of Inversion Layer in Metal-Oxide-Semiconductor Devices by Hou, Yong-Tian; Li, Ming-Fu is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Hou, Yong-Tian; Li, Ming-Fu
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2001
- Language
- EN
- Field
- Engineering (Physical Sciences)