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Can I read Simulation of phosphorus ions interaction with Ge(1 0 0)-2×1 surfaces on EtoBox?
Simulation of phosphorus ions interaction with Ge(1 0 0)-2×1 surfaces by Ol’ga Anan’yina; Olexandr Yanovs’ky is a Engineering article available to read on EtoBox.
What is Simulation of phosphorus ions interaction with Ge(1 0 0)-2×1 surfaces about?
The goal of this work is the simulation of possible structures, which phosphorus ions form during adsorption on the Ge surface. Results of quantum-chemical calculations of phosphorous ions (P À , P + ) adsorption on clean ordered and disordered Ge(1 0 0)-(2 Â 1) surfaces are presented in this work. Adsorption barriers for phosphorous ions, electronic states of Ge(1 0 0)-(2 Â 1) surface with adsorbed and implanted P ions are calculated. Comparative analysis of simulation results for clusters of various sizes is presented. Phosphorus is a typical dopant and its adsorption on Ge surface is an initial stage of diffusion into the subsurface layers of semiconductor.
Who reads Simulation of phosphorus ions interaction with Ge(1 0 0)-2×1 surfaces?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ol’ga Anan’yina; Olexandr Yanovs’ky
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0042-207X)
- Published
- 2005
- Language
- EN
- Field
- Engineering (Physical Sciences)