Opening book details…
About this Engineering article
High Mobility Two-dimensional Hole System on Hydrogen-terminated Silicon (111) Surfaces by Hu, Binhui; Kott, Tomasz M.; McFarland, Robert N.; Kane, B. E. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Hu, Binhui; Kott, Tomasz M.; McFarland, Robert N.; Kane, B. E.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2012
- Language
- EN
- Field
- Engineering (Physical Sciences)
More by Hu, Binhui; Kott, Tomasz M.; McFarland, Robert N.; Kane, B. E.
Browse all works by Hu, Binhui; Kott, Tomasz M.; McFarland, Robert N.; Kane, B. E.