About this scholarly article

2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Characterization of oxide traps by RTN measurement in MOSFETs and memory devices by Shin, Hyungcheol; Byoungchan Oh, is a scholarly article available to read on EtoBox.

Author

Shin, Hyungcheol; Byoungchan Oh,

Publisher

IEEE

Published

2010

Language

EN