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About this Physics and Astronomy article
Generation of point defects in crystalline silicon by MeV heavy ions: Dose rate and temperature dependence by Svensson, B. G.; Jagadish, C.; Williams, J. S. is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Svensson, B. G.; Jagadish, C.; Williams, J. S.
- Publisher
- The American Physical Society; American Physical Society; American Physical Society (APS) (ISSN 0031-9007)
- Published
- 1993
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)
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