About this document
Toshiba TK07H90A N-Channel MOSFET by ibere cristiano Silva is a document available to read on EtoBox.
This document provides specifications for the TK07H90A n-channel MOSFET transistor made by Toshiba. Key specifications include a maximum drain-source voltage of 900V, on-resistance of 1.6 ohms, forward transfer admittance of 5.0 siemens, and leakage current below 100 microamps. The document also lists maximum ratings, thermal characteristics, electrical characteristics, and markings for the transistor.
- Author
- ibere cristiano Silva
- Language
- EN