Opening book details…
About this Materials Science article
The reaction of Co and Si1−xGex for MOSFET with poly-Si1−xGex gate by K.M. Chen; H.J. Huang; C.Y. Chang; T.Y. Huang; G.W. Huang; L.P. Chen is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- K.M. Chen; H.J. Huang; C.Y. Chang; T.Y. Huang; G.W. Huang; L.P. Chen
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0254-0584)
- Published
- 2001
- Language
- EN
- Field
- Materials Science (Physical Sciences)
More by K.M. Chen; H.J. Huang; C.Y. Chang; T.Y. Huang; G.W. Huang; L.P. Chen
Browse all works by K.M. Chen; H.J. Huang; C.Y. Chang; T.Y. Huang; G.W. Huang; L.P. Chen