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Coherent Tunneling and Strain Sensitivity of an All Heusler Alloy Magnetic Tunneling Junction: A First-Principles Study by Bhattacharya, Joydipto; Rawat, Ashima; Pati, Ranjit; Chakrabarti, Aparna; Pandey, Ravindra is a scholarly article available to read on EtoBox.

What is Coherent Tunneling and Strain Sensitivity of an All Heusler Alloy Magnetic Tunneling Junction: A First-Principles Study about?

Half-metallic Co-based full Heusler alloys have captured considerable attention of the researchers in the realm of spintronic applications, owing to their remarkable characteristics such as exceptionally high spin polarization at Fermi level, ultra-low Gilbert damping, and high Curie temperature. In this comprehensive study, employing density functional theory, we delve into the stability and electron transport properties of a magnetic tunneling junction (MTJ) comprising a Co$_2$MnSb/HfIrSb interface. Utilizing a standard model given by Julliere, we estimate the tunnel magnetoresistance (TMR) ratio of this heterojunction under external electric field, revealing a significantly high TMR ratio (500%) that remains almost unaltered for electric field magnitudes up to 0.5 V/A. In-depth investigation of K-dependent majority spin transmissions uncovers the occurrence of coherent tunneling for the Mn-Mn/Ir interface, particularly when a spacer layer beyond a certain thickness is employed. Additionally, we explore the impact of bi-axial strain on the MTJ by varying the in-plane lattice constants between -4% and +4%. Our spin-dependent transmission calculations demonstrate that the Mn-Mn/Ir

Author

Bhattacharya, Joydipto; Rawat, Ashima; Pati, Ranjit; Chakrabarti, Aparna; Pandey, Ravindra

Published

2023

Language

EN