About this scholarly article

1985 International Electron Devices Meeting - Trap generation in gate oxide layer of MOS structures encapsulated by silicon nitride by Fujita, S.; Uemoto, Y.; Sasaki, A. is a scholarly article available to read on EtoBox.

Author

Fujita, S.; Uemoto, Y.; Sasaki, A.

Publisher

IRE

Published

1985

Language

EN