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Lab Vlsi2 by Huy Hoàng Nguyễn is a document available to read on EtoBox.

The lab report investigates the hold margin of an SRAM cell by analyzing the effects of noise voltage on the stored values at nodes Q and Q_b. The hold margin is determined to be 0.53 V, where values remain stable until Vnoise reaches this threshold. Additionally, the report includes measurements for read margin and write noise, indicating the voltage levels at which the values remain unchanged or revert.

Author

Huy Hoàng Nguyễn

Language

EN