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About this Engineering article
Prebreakdown and breakdown effects in AlGaN/GaN heterostructure field effect transistors by Chen, Q.; Yang, J.; Gradinaru, G.; Khan, M. Asif; Kao, N. C.; Sudarshan, T. S. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Chen, Q.; Yang, J.; Gradinaru, G.; Khan, M. Asif; Kao, N. C.; Sudarshan, T. S.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1998
- Field
- Engineering (Physical Sciences)
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