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About this Engineering article

Single event upset sensitivity of 45 nm FDSOI and SOI FinFET SRAM by Tang, Du; Li, YongHong; Zhang, GuoHe; He, ChaoHui; Fan, YunYun is a Engineering article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Engineering.

Author
Tang, Du; Li, YongHong; Zhang, GuoHe; He, ChaoHui; Fan, YunYun
Publisher
SP Science China Press; Science in China Press (SCP); Springer-Verlag; Springer Verlag; Zhongguo Kexue Zazhishe/Science in China Press; Springer Science and Business Media LLC; Science China Press., Co. Ltd. (ISSN 1006-9321)
Published
2013
Field
Engineering (Physical Sciences)

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