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About this Engineering article
Origin of Reverse Annealing Effect in Hydrogen-implanted Silicon by Di, Z. F. ;Wang, Y. Q. ;Nastasi, M. ;Theodore, N. David is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Di, Z. F. ;Wang, Y. Q. ;Nastasi, M. ;Theodore, N. David
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)
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