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Surface strain and hexagonal/cubic polymorphism in InGaN epitaxy: first‐principles study by T. Nakayama; Y. Takei is a Engineering article available to read on EtoBox.

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## Abstract The energetics and the growth dynamics of InGaN layers on strained InN substrates are studied using the first‐principles calculations. It is shown that the diffusion of adsorbed atoms on the surface is suppressed when the grown layers receive the tensile stress from the substrate.and the bonding between adsorbed and surface atoms is weakened. The present results indicate that the surface strain is one of relevant factors to promote InGaN hexagonal/cubic polymorphism in epitaxy. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Author
T. Nakayama; Y. Takei
Publisher
John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)
Published
2007
Language
EN
Field
Engineering (Physical Sciences)

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