About this scholarly article

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting - Properties of Si-SiO/sub 2/ interface traps due to low-energy Ar/sup +/ backsurface bombardment in n-channel nitrided MOSFETs by Surya, C.; Wang, W.; Fong, W.K.; Chan, C.H.; Lai, P.T. is a scholarly article available to read on EtoBox.

Author

Surya, C.; Wang, W.; Fong, W.K.; Chan, C.H.; Lai, P.T.

Publisher

IEEE

Published

1996

Language

EN