About this scholarly article

2010 International Conference on Simulation of Semiconductor Processes and Devices - Modeling of the voltage snap-back in amorphous-GST memory devices by Rudan, M.; Giovanardi, F.; Tsafack, T.; Xiong, F.; Piccinini, E.; Buscemi, F.; Liao, A.; Pop, E.; Brunetti, R.; Jacoboni, C. is a scholarly article available to read on EtoBox.

Author

Rudan, M.; Giovanardi, F.; Tsafack, T.; Xiong, F.; Piccinini, E.; Buscemi, F.; Liao, A.; Pop, E.; Brunetti, R.; Jacoboni, C.

Publisher

IEEE

Published

2010

Language

EN